Detectors
Our range
Our repertoire includes the accurate mounting of detector chips based on SiC, Si, GaP and compound semiconductors to form lines and arrays.
- Development of modules from the semiconductor chip to the housing
- Combination of detector chips with beam-forming components (filters, grids and lenses)
- Integration of the evaluation / preprocessing electronics in the detector housing to ensure low-noise signal transmission / processing
- Integration of Peltier elements and temperature sensors
- Standard housing or various customer-specific housing types possible: TO, SMD, LCC (HTCC ceramics), etc.
Various possible detector materials:
- SiC: 200 to 400 nm
- Si: 200 to 1100 nm
- GaP: 200 to 550 nm
- InGaAs: 600 to 2500 nm
- Ge: 800 to 1800 nm
We manufacture customized detectors or assemblies. We are happy to advise you on deployment and application. Please contact us directly with your tasks or the distributors responsible for your region.
